VS-8EWH06FNHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 1 document number: 94739 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 8 a fred pt ? features ? hyperfast recovery time, reduced q rr and soft recovery ? 175 c maximum operating junction temperature ? for pfc crm/ccm operation ? low forward voltage drop ? low leakage current ? aec-q101 qualified ? meets jesd 201 class 2 whisker test ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applications state of the art hyperfast recove ry rectifiers designed with optimized performance of forw ard voltage drop, hyperfast recovery time, and soft recovery. ? the planar structure and the platinum doped life time control guarantee the best ov erall performanc e, ruggedness and reliability characteristics. ? these devices are intended for use in pfc boost stage in the ac/dc section of smps inverters or as freewheeling diodes. their extremely optimized stored charge and low recovery current minimize the swit ching losses and reduce over dissipation in the switching element and snubbers. product summary package to-252aa (d-pak) i f(av) 8 a v r 600 v v f at i f 1.3 v t rr (typ.) 18 ns t j max. 175 c diode variation single die 2, 4 3 anode 1 n/c to-252aa (d-pak) absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 143 c 8 a non-repetitive peak surge current i fsm t j = 25 c 90 peak repetitive forward current i fm t c = 143 c, f = 20 khz, d = 50 % 16 operating junction and storage temperatures t j , t stg -65 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 8 a - 2.0 2.4 i f = 8 a, t j = 150 c - 1.3 1.8 reverse leakage current i r v r = v r rated - - 50 a t j = 150 c, v r = v r rated - - 500 junction capacitance c t v r = 600 v - 8 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
VS-8EWH06FNHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 2 document number: 94739 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v 21 ns i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 18 22 t j = 25 c i f = 8 a ? di f /dt = 200 a/s ? v r = 390 v -25- t j = 125 c - 34 - peak recovery current i rrm t j = 25 c - 3.3 - a t j = 125 c - 4.8 - reverse recovery charge q rr t j = 25 c - 39 - nc t j = 125 c - 90 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg -65 - 175 c thermal resistance, ? junction to case per leg r thjc -1.82.2c/w approximate weight 0.3 g 0.01 oz. marking device case style to-252aa (d-pak) 8ewh06fnh
VS-8EWH06FNHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 3 document number: 94739 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics v fm - forward voltage drop (v) i f - instantaneous forward current (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1 10 100 t j = 25 c t j = 175 c t j = 125 c v r - reverse voltage (v) i r - reverse current (a) 0 100 200 300 400 500 600 0.001 0.01 0.1 1 10 100 1000 t j = 25 c t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 175 c v r - reverse voltage (v) c - junction capacitance (pf) 0 100 200 300 400 500 600 1 10 100 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 s ingle pul s e (thermal re s i s tance) d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.5 d = 0.2
VS-8EWH06FNHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 4 document number: 94739 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r allowable case temperature (c) i f(av) - average forward current (a) 02468101214 110 120 130 140 150 160 170 180 dc s ee note (1) sq uare wave (d = 0.50) rated v r applied i f - average power loss (w) i f(av) - average forward current (a) 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 rm s limit dc t rr (nc) 1000 100 10 15 20 25 30 35 40 45 50 8 a, t j = 25 c 8 a, t j = 125 c di f dt (a/s) q rr (nc) 0 50 100 150 200 250 300 350 8 a, t j = 25 c 8 a, t j = 125 c di f dt (a/s) 1000 100
VS-8EWH06FNHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 5 document number: 94739 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-8EWH06FNHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 6 document number: 94739 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-8EWH06FNHM3 75 3000 antistatic plastic tube vs-8ewh06fntrhm3 2000 2000 13" diameter reel vs-8ewh06fntrrhm3 3000 3000 13" diameter reel vs-8ewh06fntrlhm3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95519 part marking information www.vishay.com/doc?95518 packaging information www.vishay.com/doc?95033 2 - current rating (8 = 8 a) 4 - package identifier: w = d-pak e = single diode 5 - h = hyperfast recovery 6 - voltage rating (06 = 600 v) 7 - fn = to-252aa 8 - tr = tape and reel none = tube trl = tape and reel (left oriented) trr = tape and reel (right oriented) 3 - circuit configuration: 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 8 9 vs- 8 e w h 06 fn trl h m3 10 - environmental digit: m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 10 9 - h = aec-q101 qualified
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